Several preparation of silicon carbide ceramics

Because of the excellent performance of silicon carbide ceramic, silicon carbide ceramics so people very recognized, so the research and development of silicon carbide ceramics are also very much, following preparation of silicon carbide ceramics speak several ways.
(1) Although SiC hot temperatures above 2000 degrees and pressures above 350MPa can SIC hot pure dense, but usually a method or the use of additives. Pressing additives types: a class of impurities in silicon carbide form a liquid phase by liquid phase sintering promotion; one is reduced forms a solid solution with SiC grain boundary to promote sintering.
(2) atmospheric pressure sintered silicon carbide SiC is also named as sintered silicon carbide, sintered at temperatures above 2100 degrees, generating high-purity, high-density silicon carbide ceramics.
(3) reaction bonded silicon carbide SiC reaction, also known as self-adjoint SIC. Silicon carbide powder and graphite powder mixed at a ratio of body pressed into blocks, heated to 1650 degrees, and C by a gas phase reaction.