The main analytical test methods silicon carbide powder:

The main purpose
For H&X garnet abrasive inch monocrystalline silicon, polycrystalline silicon, gallium arsenide, wire-cut quartz crystal. Processing materials are engineered solar photovoltaic industry, the semiconductor industry, piezoelectric crystal industry.
The main analysis of silicon carbide detection methods:
Determine the content of silicon carbide in the silicon carbide hardness. SiC particle size on the line cutting a great impact, but the most important thing is the shape of the silicon carbide particles. Because when H&X Aluminium hydroxide wire cutting silicon carbide particles to change the shape of the free state of cutting efficiency and cutting quality to be an important influence.
Detection methods: silicon content requires atomic absorption detection (high detection efficiency, more accurate values​​).
Silicon carbide particle resistance method requires particle analyzer (high efficiency).
Silicon carbide grain type detection requires Reith RA200 particle analyzer. (Particle shape can be analyzed more accurate roundness factor)